General description

CRHEA-CNRS is involved in the growth of wide-bandgap semiconductors (GaN and ZnO) by several techniques, including MBE and MOVPE. The main growth activity is supported by structural (high resolution X-ray Diffraction, scanning and transmission electron microscopy, atomic force microscopy and scanning tunneling microscopy), optical (photoluminescence, reflectivity, electro-optic measurements) and electrical characterization (C-V, Hall, resistivity) techniques. Besides, our clean room allows fabricating test devices (GaN-based LEDs and laser diodes are two examples) that enable assessing the quality of the obtained heterostructures and the fabrication of more complex heterostructures, as polaritons lasers. Indeed, in scuh structures we have recently observed room-temperature polariton Bose-Einstein condensation, which should allow the development of new coherent sources, similar to lasers but with much smaller “lasing thresholds”.

Website –

Research Area 1 – New Laser Sources

Contact person – Jesus Zuniga-Perez,

Research Area 2 – New Photonic Materials

Contact person – Jesus Zuniga-Perez,

Publications of interest

  • Sci Rep. 6 (2016) 21650, “Deep-UV nitride-on-silicon microdisk laser”, J. Sellès et al.
  • Appl. Phys. Lett. 108 (2016) 251904, “Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder”, J. Zuniga-Perez et al.
  • Phys. Rev. Lett. 110 (2013) 196406, “From excitonic to photonic poalriton condensate”, F. Li et al.
  • Phys. Rev. B 93 (2016) 115205, “Polariton condensation phase diagram in wide-bandgap planar microcavities: GaN versus ZnO”, O. Jamadi et al.
  • ACS Photonics 3 (2016) 1240, “Imaging photonic crystal localized modes through third harmoonic generation”, Y. Zneg et al.